Semiconductor strain gauges


We offer high quality, miniaturized, semiconductor strain gauges. Our gauges are obtained from a solid single grown crystal of “P” doped Silicon. This results in resistive device with minimum of molecular slippages permitting repeatable use to high strain and very high sensitivity.

Semiconductor strain gauges are available in three standard shapes (“Bar“, “U“, and “M“) or any other customized configuration.

Bondable terminals are specially designed for use in strain gauge circuits. They are convenient junction points for connecting single or multiple strain gauges to larger instrumentation leads.

Our gauges have the following advantages:



Sensitivity and Signal Output

Our Semiconductor Strain Gages have a Gauge Factor as high as 200 and deliver a typical full-scale output at 500 μ-strain of 20mV/V when temperature compensated.



Many applications, e.g., implantable medical sensors, offer extremely small space for gauge or bridge placement. Our Gauges are as small as 0.457 mm long (with an active area of 0.279 mm) and 0.010 mm thick.


Very low power consumptions / Wireless IoT

Our semiconductor strain gauges have high impedance: that reduces the required current at a fixed voltage, enabling stronger RF signals at greater transmission range. The high gauge factor enables excellent resolution at low power input to the gauge.



Our Semiconductor Strain Gages have outstanding long term stability and have been used embedded in safety-critical, high-cost products for several decades without issues.


Precision Temperature Compensation and Gauge Matching

Our Semiconductor Strain Gages are predominantly used in half-bridge and full-bridge configurations, which compensate for temperature and deliver highly accurate strain output. We use advanced instrumentation for precision measurement of gauge temperature dependence. This temperature characterization is then used to carefully match gauge sets for use in half or full bridges.


Life Cycles

Our Gauges will operate for an infinite number of cycles provided that operating strain is kept under 500 μ-strain and the maximum full-scale strain is kept under the one μ-strain precision elastic limit for the material the gauge is being bonded to.

Discuss your application with us

We can compensate for temperature change with passive resistors: thermal imbalance and sensitivity changes with temperature can be eliminated. We can also build our sensors for minimum drift over time (years and decades).

Datasheet Semiconductor Strain Gauges


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